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Mechanisms of Atomic Layer Deposition on Substrates with Ultrahigh Aspect Ratios
Kucheyev, S. O.; Biener, J.; Baumann, T.F.; Wang, Y.M.; Hamza, A. V.; Li, Z.; Gordon, Roy G.
Langmuir (2008),24: 943-948
Synthesis and Characterization of Ruthenium Amidinate Complexes as Precursors for Vapor Deposition
Li, Huazhi; Aaltonen, Titta; Li, Zhengwen; Lim, Booyong; Gordon, Roy G.
The Open Inorganic Chemistry Journal (2008), 2: 11-17.
Vapor Deposition of Ruthenium from an Amidinate Precursor
Li, Huazhi; Farmer, Damon B.; Gordon, Roy G.; Lin, Youbo; Vlassak, Joost
J. Electrochem. Soc. (2007), 154: D642-D647.
Density Function Theory Study of Copper Aggiomeration on the WN(001) Surface
Wu, Jinping; Han, Bo; Zhou, Chenggang; Lei, Xinjian; Gaffney, Thomas R.; Norman, John A. T.; Li, Zhengwen; Gordon, Roy G.; Cheng, Hansong
Journal of Physical Chemistry C (2007), 111: 9403-9406.
Synthesis and Sublimination Kinetics of a Highly Volatile Asymmetric Iron(II) Amidinate
Li, Xin-Gui; Li, Zhengwen; Li, Huazhi; Gordon, Roy G.
European Journal of Inorganic Chemistry (2007), 8: 1135-1142
High Density RU Nanocrystal Deposition for Nonvolatile Memory Applications
Farmer, Damon B.; Gordon, Roy G.
J. App. Phys. (2007), 101: 124503/1-124503-5
In-situ FTIR Study of Atomic Layer Deposition (ALD) of Copper Metal Films
Dai, Min; Kwon, Jinhee; Langereis, Erik; Wielunski, Leszek; Chabal, Yves J.; Li, Zhengwen; Gordon, Roy G.
ECS Transactions (2007), 11: 91-101.
Atomospheric Pressure Chemical Vapor Deposition of Transparent Conducting Films of Fluorine Doped Zinc Oxide and their Application to Amorphous Silicon Solar Cells
Haifan Liang, Roy G. Gordon
J. Mater. Sci. (2007), 42: 6388-6399.
Atomic Layer Deposition of Insulating Interfacial
Nitride Layers for Germanium Metal Oxide Semiconductor Field Effect Transistors with High-κ
Oxide/Tungsten Nitride Gate Stacks
Kim, Kyoung H.; Gordon, Roy G.; Ritenour, Andrew; Antoniadis, Dimitri A.
Appl. Phys. Lett. (2007), 90: 212104.
Computational Study on the Relative Reactivities of Cobalt and Nickel Amidinates via B-H Migration
Wu, Jinping; Li, Jiaye; Zhou, Chenggang; Lei, Xinjian; Gaffney, Thomas; Norman, John A.T.; Li, Zhengwen; Gordon, Roy G.; Cheng, Hansong
Organometallics (2007), 26(11): 2803-2805.
Atomic Layer Deposition of Ultrathin Copper Metal Films from a Liquid Copper(I)Amidinate Precursor
Li, Zhengwen; Rahtu, Antti; Gordon, Roy G.
J. Electrohem. Soc. (2006), 153(11): C787-C794.
Atomic Layer Deposition of Gadolinium Scandate Films with High Dielectric Constant and Low Leakage Current
Kim, Kyoung H.; Farmer, Damon B.; Lehn, Jean-Sebastien M.; Rao, P. Venkateswara; Gordon, Roy G.
App. Phys. Letts. (2006), 89(13): 133512/1-133512/3.
Thin, Continuous, and Conformal Copper Films by Reduction of Atomic Layer Deposited Copper Nitride
Li, Zhengwen; Gordon, Roy G.
Chem. Vap. Dep. (2006), 12(7):435-441
ALD of Scandium Oxide from Scandium Tris(N,N'-diisopropylacetamidinate) and Water
de Rouffignac, Philippe; Yousef, Andrew P.; Kim, Kyoung H.; Gordon, Roy G.,
Electrochem. Solid-State Letts. (2006), 9(6): F45-F48.
ALD of Praseodymium Aluminum Oxide for Electrical Applications
de Rouffignac, Philippe; Gordon, Roy G.,
Chemical Vapor Deposition (2006), 12(2-3): 152-157.
ALD on Suspended Single-Walled Carbon Nanotubes via Gas-Phase Noncovalent Functionalization
Farmer, Damon; Gordon, Roy G.,
Nano Letts., (2006), 6(4): 699-703.
ALD of Y2O3 Thin Films from Yttrium Tris(N,N'-diisopropylacetamidinate) and Water
deRouffignac, Philippe; Park, Jin-Seong; Gordon, Roy G.,
Chem. Mats. (2005), 17(19): 4808-4814.
Tantalum(V) Nitride Inverse Opals as Photonic Structures for Visible Wavelengths
Rugge, Alessandro; Park, Jin-Seong; Gordon, Roy G.; Tolbert, Sarah H.,
J. Phys. Chem. B. (2005), 109(9): 3764-3771.
Self-aligned 40 nm Channel Carbon Nanotube Field-effect Transistors with Subthreshold Swings Down to 70mV/decade
Javey, Ali; Farmer, Damon; Gordon, Roy G.; Dai, Hongjie,
Proceedings of SPIE-The International Society for Optical Engineering (Quantum Sensing and Nanophotonic Devices II, M. Razeghi, G.J. Brown, eds.) (2005), 5732: 14-18.
Nucleation and Adhesion of ALD Copper on Cobalt Adhesion Layers and Tungsten Nitride Diffusion Barriers
Li, Zhengwen; Gordon, Roy G.; Farmer, Damon B.; Lin, Youbo; Vlassak, Joost
Electrochemical and Solid-State Letters, 2005, 8: G182.
ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone
Liu, Xinye; Ramanathan, S.; Longdergan, Ana; Srivastava, A.; Lee, Eddie; Seidel, Thomas E.; Barton, Jeffrey T.; Pang, Dawen; Gordon, Roy G.
J. Electrochem. Soc., 2005, 152: G213-G219.
Precursors for Atomic Layer Deposition of High-K Dielectrics
Musgrave, Charles; Gordon, Roy G.
Future Fab International, January, 2005, 18: 126-128.
Atomic Layer Deposition of High-k dielectrics on Suspended Functionalized SWNTs
Farmer, Damon; Gordon, Roy G.
Electrochem. Solid-State Letts. 2005, 8: G89-G91.
Synthesis and Characterization of Cu(I) Amidinates as Precursors for Atomic Layer Deposition (ALD) of Copper Metal
Li, Zhengwen; Barry, Sean T.; Gordon, Roy G.
Inorganic Chemistry, 2005, 44: 1728-1735.
High-performance n-type Carbon Nanotube Field-effect Transistors with Chemically Doped Contacts
Javey, Ali; Tu, Ryan; Farmer, Damon; Guo, Jing; Gordon, Roy G.; Dai, Hongjie
Nano Letts, 2005, 5(2): 345-348.
Determination of Energy Barrier Profiles for High-k Dielectric Materials Utilizing Bias-dependent Internal Photoemission
Brewer, Julie Casperson; Walters, Robert J.; Bell, L. Douglas; Farmer, Damon B.; Gordon, Roy G.; Atwater, Harry A.
Applied Physics Letters, 2004, 85: 4133-4135.
Sealing Porous Low-k Dielectrics with Silica
deRouffignac, Philippe; Li, Zhengwen; Gordon, Roy G.
Electrochemical and Solid-State Letters, 2004, 7: G306-G308.
Improved fill factors in amorphous silicon solar cells on zinc oxide by insertion of a germanium layer to block impurity incorporation
G. Gangulya, D. E. Carlson, S. S. Hegedus, D. Ryan, R. G. Gordon, D. Pang, and R. C. Reedy
Applied Physics Letters, 2004, Vol. 85, No. 3: 19 July 2004.
Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides
Jill S. Becker, Esther Kim, and Roy G. Gordon
Chemistry of Materials, 2004, Vol. 16, 3497-3501.
Surface Chemistry and Electrical Properties of Germanium Nanowires
Dunwei Wang, Ying-Lan Chang, Qian Wang, Jien Cao, Damon B. Farmer, Roy G. Gordon, and Hongjie Dai,
JACS, 2004, Vol. 126, 11602-11611.
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
Ali Javery, Jing Guo, Damon B. Farmer, Qian Wang, Erhan Yenilmez, Roy G. Gordon, Mark Lundstrom, and Hongjie Dai
Nano Letters, 2004, Vol. 4, No. 7: 1319-1322.
Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores
Peng Chen, Toshiyuki Mitsui, Damon B. Farmer, Jene Golovchenko, Roy G. Gordon, and Daniel Branton
Nano Letters, 2004, Vol. 4, No. 7: 1333-1337.
Atomic Layer Deposition of Lanthanum Aluminum Oxide for Electrical Applications
Booyong S. Lim, Antti Rahtu, P. de Rouffignac, Roy G. Gordon
Applied Physics Letters, 2004, Vol. 84, No. 20, 3957-3959.
Analysis of the crystal structures of 1,3-di-tert-butyl-2,3-dihydro-1H-1,3,2-diazasilol-2-ylidene and 1,3-di-tert-butyl-2,2-dichloro-1,3-diaza-2-sila-4-cyclopentene
J. S. Becker, R. J. Staples*, R. G. Gordon
Cryst. Res. Technol., 2004, Vol. 39, No. 1, 85-88.
Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-K Gate Dielectrics
Ali Javey, Jing Guo, Damon B. Farmer, Qian Wang, Dunwei Wang, Roy G. Gordon, Mark Lundstrom, and Hongjie Dai
Nano Letters, 2004, Vol. 4, No. 3, 447-450.
Atomic Layer Deposition of Transition Metals
Booyong S. Lim, Antti Rahtu and Roy G. Gordon
Nature Materials, 2003, Vol. 2, 749-754.
Synthesis and Characterization of Volatile, Thermally Stable, Reactive Transition Metal Amidinates
Booyong S. Lim, Antti Rahtu, Jin-Seong Park, and Roy G. Gordon
Inorg. Chem., 2003, Vol. 42, 7951-7958.
Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications
M. J. Biercuk, D. J. Monsma, and C. M. Marcus
J.S.Becker and R.G.Gordon
Appl. Phys. Lett., 2003, 83.
Tungsten Nitride Inverse Opals by Atomic Layer Deposition
Alessandro Rugge, Jill S. Becker, Roy G. Gordon, and Sarah H. Tolbert
Nano Letters, 2003, Vol. 3, No. 9, 1293-1297.
Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors
Dennis M. Hausmann, Philippede Rouffignac, Amethyst Smith, Roy Gordon, Douwe Monsma
Thin Solid Films, 2003, 443, 1-4.
Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Depostion from a Novel Precursor
Jill S. Becker, Seigi Suh, and Roy G. Gordon
Chem. Mater., 2003, 15, 2969-2976.
Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido) tungsten and ammonia
Jill S. Becker and Roy G. Gordon
Appl. Phys. Lett., 2003, 82, 2239 - 2241.
A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches
Roy G. Gordon, Dennis M. Hausmann, Esther Kim, and Joseph Shepard
Chem. Vap. Deposition, 2003, 9, 73.
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films
Dennis Hausmann and Roy G.Gordon
J. Crystal Growth, 2003, 249, 251ö261.
Rapid Vapor Deposition of Highly Conformal Silica Nanolaminates
Dennis Hausmann, Jill Becker, Shenglong Wang, and Roy G.Gordon
Science, 2002, 298, 402-406.
Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors
Dennis M. Hausmann, Esther Kim, Jill Becker, and Roy G. Gordon
Chem. Mater. 2002, 14, 4350-4358
Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics
Roy G. Gordon, Jill Becker, Dennis Hausmann, and Seigi Suh
Chem. Mater., 2001, 13, 2463 - 2464.
Atmospheric pressure chemical vapor deposition of electrochromic tungsten oxide films
Roy G. Gordon, Sean Barry, Jeffrey T. Barton, and Randy N.R. Broomhall-Dillard
Thin Solid Films, 2001, 392, 231-235.
Criteria for Choosing Transparent Conductors
Roy G. Gordon
Mrs Bulletin/August 2000
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