Heteroepitaxy of La₂O₃ and La_2-xY_xO₃ on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density
Wang, Xinwei; Dong, Lin; Zhang, Jingyun; Liu, Yiqun; Ye, Peide D.;
Gordon, Roy G.
Nano Letters
(2013)13:594-599

Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer
Sinsermsuksakul, Prasert; Hartman, Katy; Kim, Sang Bok; Heo, Jaeyeong; Sun, Leizhi; Park, Helen Hejin; Chakraborty, Rupak; Buonassisi, Tonio; Gordon, Roy G.
Applied Physics Letters
(2013)102:053901.1-053901.5

Smooth, Low-Resistance, Pinhole-Free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition
Wang, Xinwei; Gordon, Roy G
ECS Journal of Solid State Science and Technology
(2013)2:N41-N44

Antimony-Doped Tin(II) Sulfide Thin Films
Sinsermsuksakul, Prasert; Chakraborty, Rupak; Kim, Sang Bok; Heald, Steven M.; Buonassisi, Tonio; Gordon, Roy G.
Chemistry of Materials
(2012)24:4556-4562

Atomic Layer Disposition of Sc for passivating AlGaN/GaN high electron mobility transistor devices
Wang, Xinwei; Saadat, Omair I.; Xi, Bin; Lou, Xiabing; Molnar, Richard J.; Palacios, Tomas; Gordon, Roy G.
Applied Physics Letters
(2012)101:232109.1-23109.4

III-V 4D Transistors
Gu, J.J.; Wang, X.W.; Shao, J.; Neal, A.T.; Manfra, M.J.; Gordon, R.G.; Ye, P.D.
IEEE Device Research Conference
(2012):1-2

Glass-Encapsulated Light Harvesters: More Efficient Dye-Sensitized Solar Cells by Deposition of Self-Aligned, Conformal, and Self-Limited Silica Layers
Son, Ho-Jin; Wang, Xinwei; Prasittichai, Chaiya; Jeong, Nak Cheon; Aaltonen, Titta; Gordon, Roy G.; Hupp, Joseph T.
Journal of the American Chemical Society
(2012)134:9537-9540

Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects
Bhandari, Harish B.; Yang, Jing; Kim, Hoon; Lin, Youbo; Gordon, Roy G.; Wang, Qing Min; Lehn, Jean-Sebastien M.; Li, Huazhi; Shenai, Deo
ECS Journal of Solid State Science and Technology
(2012)1:N79-N84

Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors
Heo, Jaeyeong; Kim, Sang Bok; Gordon, Roy G.
Applied Physics Letters
(2012)101:113507

Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO₃ Heterostructures Grown by Atomic Layer Deposition
Lee, Sang Woon; Liu, Yiqun; Heo, Jaeyeong; Gordon, Roy G.
Nano Letters
(2012)12:4775-4783

Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors
Liu, Qingmin; Dong, Lin; Liu, Yiqun; Gordon, Roy; Ye, Peide D.; Fay, Patrick; Seabaugh, Alan
Solid-State Electronics
(2012)76:1-4

Synthesis of vanadium dioxide thin films on conducting oxides and metal-insulator transition characteristics
Cui, Yanjie; Wang, Xinwei; Zhou, You; Gordon, Roy; Ramanathan, Shriram
Journal of Crystal Growth
(2012)338: 96-102

Vapor Deposition of Highly Conformal Copper Seed Layers for Plating Through-Silicon Vias (TSVs)
Au, Yeung; Wang, Qing Min; Li, Huazhi; Lehn, Jean-Sebastien M.; Shenai, Deo V.; Gordon, Roy G.
Journal of The Electrochemical Society
(2012)159:D382-D385

Atomic layer deposition of tin oxide with nitric oxide as an oxidant gas
Heo, Jaeyeong; Kim, Sang Bok; Gordon, Roy G.
Journal of Materials Chemistry
(2012)22:4599-4602

Atomic Layer Deposition of Tin Monosulfide Thin Films
Sinsermsuksakul, Prasert; Heo, Jaeyeong; Noh, Wontae; Hock, Adam S.; Gordon, Roy G.
Advanced Energy Materials
(2011)1:1116-1125

Impact of ultrathin Al₂O₃ barrier layer on electrical properties of LaLuO₃ metal-oxide-semiconductor devices
Liu, Yiqun; Shen, Shaoping; Brillson, Leonard J.; Gordon, Roy G.
Applied Physics Letters
(2011)98:122907/1-122907/3

Impact of ultrathin Al₂O₃ diffusion barriers on defects in high-k LaLuO₃ on Si
Shen, S.; Liu, Y.; Gordon, R.G.; Brillson, L.J.
Applied Physics Letters
(2011)98:172902/1-172902/3

(Sn,Al)O_x Films Grown by Atomic Layer Deposition
Heo, Jaeyeong; Liu, Yiqun; Sinsermsuksakul, Prasert; Li, Zhefeng; Sun, Leizhi; Noh, Wontae; Gordon, Roy G.
Journal of Physical Chemistry C
(2011)115:10277-10283

Filling Narrow Trenches by Iodine-Catalyzed CVD of Copper and Manganese on Manganese Nitride Barrier/Adhesion Layers
Au, Yeong; Lin, Youbo; Gordon, Roy G.
Journal of The Electrochemical Society
(2011)158:D248-D253

First Experimental Demonstration of Gate-all-around III-V MOSFETs by Top-down Approach
Gu, J.J.; Liu, Y.Q.; Wu, Y.Q.; Colby, R.; Gordon, R.G.; Ye, P.D.
International Electron Device Meeting
(2011)11:769-772

Three dimensional solid-state supercapacitors from aligned single-walled carbon nanotube array templates
Pint, Cary L.; Nicholas, Nolan W.; Xu, Sheng; Sun, Zhengzong; Tour, James M.; Schmidt, Howard K.; Gordon, Roy G.; Hauge, Robert H.
Carbon
(2011)49:4890-4897

Surface Chemistry of Copper(I) Acetaminidates in Connection with Atomic Layer Deposition (ALD) Processes
Ma, Qiang; Guo, Hansheng; Gordon, Roy G.; Zaera, Francisco
Chemistry of Materials
(2011)23:3325-3334

Investigation of Thermal Stability and Delivery of Cobalt Amidinates and Novel Cobalt Formamidinates for Metallic Cobalt by ALD/CVD
Wang, Qing Min; Lehn, Jean-Sebastien; Li, Huazhi; Shenai, Deo; Yang, Jing; Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2011)1

Atomic Layer Deposition and Chemical Vapor Deposition of Tin(II) Sulfide
Sinsermsuksakul, Prasert; Heo, Jaeyeong; Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2011):1-14

Surface Chemistry of Copper Precursors in Connection with Atomic Layer Deposition (ALD) Processes
Ma, Qiang; Gordon, Roy G.; Zaera, Francisco
Proceedings of the AVS Atomic Lay Deposition Conference
(2011):1-13

Atomic layer epitaxy of rare earth oxide films on GaAs(111)A and their device properties
Liu, Yiqun; Xu, Min; Heo, Jaeyeong; Ye, Peide D.; Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2011)1-18

New Ni Amidinate Source for ALD/CVD of NiN_x, NiO and NiSi
Lu, Huazhi; Perera, Thiloma; Shenai, Deo V.; Li, Zhefeng; Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2011)1-12

Novel Volatile Precursors of Palladium for ALD and CVD
Lehn, Jean-Sebastien M.; Shenai, Deo V.; Wang, Qing Min; Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2011):1

(Sn,Al)O_x Films Grown by Atomic Layer Deposition
Heo, Jaeyeong; Liu, Yiqun; Sinsermsuksakul, Prasert; Li, Zhefeng; Sun, Leizhi; Noh, Wontae; Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2011):1-14

Introduction to ALD Precursors and Reaction Mechanisms
Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2011)1-67

Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-Based Metallization for Microelectronic Fabrication
Au, Yeung; Lin, Youbo; Kim, Hoon; Li, Zhengwen; Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2011)1-19

Atomic-layer-deposited LaAlO₃/SrTiO₃ all oxide field-effect transistors
Dong, L.; Liu, Y.Q.; Xu, M.; Wu, Y.Q.; Colby, R.; Stach, E.A.; Droopad, R.; Gordon, R.G.; Ye, P.D.
Proceedings of the 2010 International Electron Device Meeting
(2010): 588-591

Heteroepitaxy of single-crystal LaLuO₃ on GaAs(111)A by atomic layer deposition
Liu, Yiqun; Xu, Min; Heo, Jaeyeong; Ye, Peide D.; Gordon, Roy G.
Applied Physics Letters
(2010)97:162910/1-162910/3

Low Temperature Epitaxial Growth of High Permittivity Rutile TiO₂ on SnO₂
Wang, Hong-Tao; Xu, Sheng; Gordon, Roy G.
Electrochemical and Solid-State Letters
(2010)13:G75-G78

Uptake of Copper Acetamidinate ALD Precursors on Nickel Surfaces
Ma, Qiang; Guo, Han-Sheng; Gordon, Roy G.; Zaera, Francisco
Chemistry of Materials
(2010)22:352-359

Direct-Liquid-Injection Chemical Vapor Deposition of Nickel Nitride Films and Their Reduction to Nickel Films
Li, Zhefeng; Gordon, Roy G.; Pallem, Venkateswara; Li, Huazhi; Shenai, Deo V.
Chemistry of Materials
(2010)22:3060-3066

Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films
Li, Zhefeng; Gordon, Roy G.; Li, Huazhi; Shenai, Deo V.; Lavoie, Christian
Journal of The Electrochemical Society
(2010)157:H679-H683

Raman Characterization and Polarity Tuning of Aligned Single-walled Carbon Nanotubes on Quartz
Lei, Bo; Ryu, Koungmin; De-Arco, Lewis Gomez; Han, Song; Badmaev, Alexander; Farmer, Damon; Kim, Kevin; Gordon, Roy G.; Wang, Kang L.; Zhou, Chongwu
Japanese Journal of Applied Physics
(2010)48:02BC02/1-02BC02/5

Low Temperature Atomic Layer Deposition of Tin Oxide
Heo,  Jaeyeong;  Hock, Adam; Gordon, Roy G.
Chemistry of  Materials
(2010)22:4964-4973

Low Temperature Atomic Layer Deposition of Tin Dioxide, SnO₂
Heo, Jaeyeong; Hock, Adam S.; Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2010)1-18

First-Principles Simulations of Conditions of Enhanced Adhesion Between Copper and TaN(111) Surfaces Using a Variety of Metallic Glue Materials
Han, Bo; Wu, Jinping; Zhou, Chenggang; Chen, Bei; Gordon, Roy G.; Lei, Xinjian; Roberts, David A.; Cheng, Hansong
Angewandte Chemie, International Edition
(2010)49:148-152

High performance atomic-layer-deposited LaLuO₃/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO₂ as interfacial passivation layer
Gu, J. J.; Liu, Y. Q.; Xu, M.; Celler, G. K.; Gordon, R. G.; Ye, P. D.
Applied Physics Letters
(2010)97:012106/1-012106/3

Surface and Interface Processes during Atomic Layer Deposition of Copper on Silicon Oxide
Dai, Min; Kwon, Jinhee; Halls, Mathew D.; Gordon, Roy G.; Chabal, Yves J.
Langmuir
(2010)26:3911-3917

Selective Chemical Vapor Deposition of Manganese Self-Aligned Capping Layer for Cu Interconnections in Microelectronics
Au, Yeung; Lin, Youbo; Kim, Hoon; Beh, Eugene; Liu, Yiqun; Gordon, Roy G.
Journal of The Electrochemical Society
(2010)157:D341-D345

Atomic Layer Deposition of Lanthanum-Based Ternary Oxides
Wang, Hongtao; Wang, Jun-Jieh; Gordon, Roy G.; Lehn, Jean-Sebastien M.; Li, Huazhi; Hong, Daewon; Shenai, Deo V.
Electrochemical and Solid-State Letters
(2009)12:G13-G15

Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor
Wang, Hongtao; Gordon, Roy G.; Alvis, Roger; Ulfig, Robert M.
Chemical Vapor Deposition
(2009)15:312-319

Self-aligned barrier layers for copper interconnects comprising manganese silicon nitride or manganese silicate preventing diffusion or corrosion
Gordon, Roy G.; Kim, Hoon
Patent application US 2009/0263965 A1
(2009)1-26

FTIR study of copper agglomeration during atomic layer deposition of copper
Dai, Min; Kwon, Jinhee; Chabal, Yves J.; Halls, Mathew D.; Gordon, Roy G.
Materials Research Society Symposium Proceedings
(2009)1155:1155-C11-06

Chemical Vapor Deposition (CVD) of Manganese Self-Aligned
Diffusion Barriers for Cu Interconnections in Microelectronics
Gordon, Roy G.; Kim, Hoon; Au, Yeung; Wang, Hongtao; Bhandari, Harish B.; Liu, Yiqun; Lee, Don Keun; Lin, Youbo
Advanced Metallization Conference 2008 Proceedings
(2009)321-329

In Situ Infrared Characterization during Atomic Layer Deposition of Lanthanum Oxide
Kwon, Jinhee; Dai, Min; Halls, Mathew  D.; Langereis, Erik; Chabal, Yves J.; Gordon, Roy G.
Journal of Physical Chemistry C
(2009)113:654-660

On the Relative Stability of Cobalt- and Nickel-Based Amidinate Complexes Against Beta-Migration
Li, Jiaye; Wu,  Jinping; Zhou, Chenggang; Han, Bo; Lei, Xinjian; Gordon, Roy G.; Cheng, Hansong
International Journal of Quantum Chemistry
(2009)109: 756-763

Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor
Chen, Zhihong; Farmer, Damon; Xu, Sheng; Gordon, Roy G.; Avouris, Phaedon; Appenzeller, Joerg
IEEE Electron Device Letter
(2008)29:183-185

Ab Initio Molecular Dynamics Simulation on the Aggregation of a Cu Monolayer on a WN(001) Surface
Han, Bo; Wu, Jinping; Zhou, Chenggang; Li, Jiaye; Lei, Xinjian; Norman, John A. T.; Gaffney, Thomas R.; Gordon, Roy G.; Roberts, David A.; Cheng, Hansong
Journal of  Physical Chemistry C
(2008)112: 9798-9802

Ultrathin CVD Cu Seed Layer Formation Using Copper Oxynitride
Deposition and Room Temperature Remote Hydrogen Plasma Reduction
Kim, Hoon; Bhandari, Harish B.; Xu, Sheng; Gordon, Roy G.
Journal of The Electrochemical Society
(2008)155: H496-H503

Effects of Low Temperature O₂ Treatment on the Electrical Properties
of Amorphous LaAlO₃ Films Made by Atomic Layer Deposition
Liu, Y.; Kim, H.; Wang, J.-J.; Li, H.; Gordon, R. G.
ECS Transactions
(2008)16:471-478

Synthesis and characterization of volatile liquid cobalt amidinates
Li, Zhengwen; Lee, Don Kuen; Coulter, Michael; Rodriguez, Leonard  N. J.; Gordon, Roy G.
Dalton Transactions
(2008)19:2592-2597

Mechanisms of Atomic Layer Deposition on Substrates with Ultrahigh Aspect Ratios
Kucheyev, S. O.; Biener, J.; Baumann, T.F.; Wang, Y.M.; Hamza, A. V.; Li, Z.; Lee, D.K.; Gordon, R. G.
Langmuir
(2008)24:943-948

Synthesis and Characterization of Ruthenium Amidinate Complexes as Precursors for Vapor Deposition
Li, Huazhi; Aaltonen, Titta; Li, Zhengwen; Lim, Booyong S.; Gordon, Roy G.
The Open Inorganic Chemistry Journal
(2008)2:11-17

Design for Precursors for ALD
Lehn, Jean-Sebastien; Li, Huazhi; Wang, Qing Min; Shenai, Deo V.; Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2008)1-20

Designing Suitable Metal Amidinate Sources for TiN and Ba/Sr-containing Thin Films
Lehn, Jean-Sebstien; Wang, Qing Min; Hong, Daewon; Shenai, Deo; Wang, Hongtao; Gordon, Roy G.
Proceedings of the AVS Atomic Layer Deposition Conference
(2008)1-14

Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties
Leu, Paul W.; Adhikari, Hemant; Koto, Makoto; Kim, Kyoung-Ha; de Rouffignac, Philippe; Marshall, Ann F.; Gordon, Roy G.; Chidsey, Christopher E. D.; McIntyre, Paul C.
Nanotechnology
(2008)19:485705/1-485705/9

Vapor Deposition of Ruthenium from an Amidinate Precursor
Li, Huazhi; Farmer, Damon B.; Gordon, Roy G.; Lin, Youbo; Vlassak, Joost
Journal of The  Electrochemical Society
(2007)154:D642-D647

Density Function Theory Study of Copper Agglomeration on the WN(001) Surface
Wu, Jinping; Han, Bo; Zhou, Chenggang; Lei, Xinjian; Gaffney, Thomas R.; Norman, John A. T.; Li, Zhengwen; Gordon, Roy G.; Cheng, Hansong
Journal of Physical Chemistry C
(2007)111:9403-9406

Synthesis and Sublimination Kinetics of a Highly Volatile Asymmetric Iron(II) Amidinate
Li, Xin-Gui; Li, Zhengwen; Li, Huazhi; Gordon, Roy G.
European Journal of Inorganic Chemistry
(2007)8:1135-1142

High density RU nanocrystal deposition for nonvolatile memory applications
Farmer, Damon B.; Gordon, Roy G.
Journal of Applied Physics
(2007)101:124503/1-124503/5

In-situ FTIR Study of Atomic Layer Deposition (ALD) of Copper Metal Films
Dai, Min; Kwon, Jinhee; Langereis, Erik; Wielunski, Leszek; Chabal, Yves J.; Li, Zhengwen; Gordon, Roy G.
ECS Transactions
(2007)11:91-101

Atmospheric pressure chemical vapor deposition of transparent conducting films of fluorine doped zinc oxide and their application to amorphous silicon solar cells
Liang, Haifan; Gordon, Roy G.
Journal of Materials Science
(2007)42:6388-6399

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks
Kim, Kyoung H.; Gordon, Roy G.; Ritenour, Andrew; Antoniadis, Dimitri A.
Applied Physics Letters
(2007)90:212104/1-212104/3

Computational Study on the Relative Reactivities of Cobalt and Nickel Amidinates via Beta-H Migration
Wu, Jinping; Li, Jiaye; Zhou, Chenggang; Lei, Xinjian; Gaffney, Thomas; Norman, John A.T.; Li, Zhengwen; Gordon, Roy G.; Cheng, Hansong
Organometallics
(2007)26:2803-2805

Atomic Layer Deposition of Ultrathin Copper Metal Films from a Liquid Copper(I)Amidinate Precursor
Li, Zhengwen; Rahtu, Antti; Gordon, Roy G.
Journal of The Electrochemical Society
(2006)153:C787-C794

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current
Kim, Kyoung H.; Farmer, Damon B.; Lehn, Jean-Sebastien M.; Rao, P. Venkateswara; Gordon, Roy G.
Applied Physics Letters
(2006)89:133512/1-133512/3

Thin, Continuous, and Conformal Copper Films by Reduction of Atomic Layer Deposited Copper Nitride
Li, Zhengwen; Gordon, Roy G.
Chemical Vapor Deposition
(2006)12:435-441

ALD of Scandium Oxide from Scandium Tris(N,N'-diisopropylacetamidinate) and Water
de Rouffignac, Philippe; Yousef, Andrew P.; Kim, Kyoung H.; Gordon, Roy G.
Electrochemical Solid-State Letters
(2006)9:F45-F48

Atomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications
de Rouffignac, Philippe; Gordon, Roy G.
Chemical Vapor Deposition
(2006)12:152-157

Atomic Layer Deposition on Suspended Single-Walled Carbon Nanotubes via Gas-Phase Noncovalent Functionalization
Farmer, Damon; Gordon, Roy G.
Nano Letters
(2006)6:699-703

Atomic Layer Deposition of Y₂O₃ Thin Films from Yttrium Tris(N,N'-diisopropylacetamidinate) and Water
de Rouffignac, Philippe; Park, Jin-Seong; Gordon, Roy G.
Chemistry of Materials
(2005)17:4808-4814

Tantalum(V) Nitride Inverse Opals as Photonic Structures for Visible Wavelengths
Rugge, Alessandro; Park, Jin-Seong; Gordon, Roy G.; Tolbert, Sarah H.
Journal of Physical Chemistry B
(2005)109:3764-3771

Self-Aligned 40 nm Channel Carbon Nanotube Field-Effect Transistors with Subthreshold Swings Down to 70mV/decade
Javey, Ali; Farmer, Damon; Gordon, Roy G.; Dai, Hongjie
Proceedings of SPIE-The International Society for Optical Engineering (Quantum Sensing and Nanophotonic Devices II, Invited Paper)
(2005)5732:14-18

Nucleation and Adhesion of ALD Copper on Cobalt Adhesion Layers and Tungsten Nitride Diffusion Barriers
Li, Zhengwen; Gordon, Roy G.; Farmer, Damon B.; Lin, Youbo; Vlassak, Joost
Electrochemical and Solid-State Letters
(2005)8:G182-G185

ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone
Liu, Xinye; Ramanathan, Sasangan; Longdergan, Ana; Srivastava, Anuranjan; Lee, Eddie; Seidel, Thomas E.; Barton, Jeffrey T.; Pang, Dawen; Gordon, Roy G.
Journal of The Electrochemical Society
(2005)152:G213-G219

Precursors for Atomic Layer Deposition of High-κ Dielectrics
Musgrave, Charles B.; Gordon, Roy G.
Future Fab International, Process Gases, Chemicals and Materials
(2005)18:126-128

ALD of High-κ dielectrics on Suspended Functionalized SWNTs
Farmer, Damon; Gordon, Roy G.
Electrochemical and Solid-State Letters
(2005)8:G89-G91

Synthesis and Characterization of Copper(I) Amidinates as Precursors for Atomic Layer Deposition (ALD) of Copper Metal
Li, Zhengwen; Barry, Sean T.; Gordon, Roy G.
Inorganic Chemistry
(2005)44:1728-1735

High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts
Javey, Ali; Tu, Ryan; Farmer, Damon B.; Guo, Jing; Gordon, Roy G.; Dai, Hongjie
Nano Letters
(2005)5:345-348

ALD process for the preparation of noble-metal-free monolithic catalysts
Bahlawane, Naoufal; Kohse-Hoeinghaus, Katharina; Park, Jin-Seong; Gordon, Roy G.
Electrochemical Society Proceedings
(2005)2005-09:583-590

Determination of energy barrier profiles for high-κ dielectric materials utilizing bias-dependent internal photoemission
Brewer, Julie Casperson; Walters, Robert J.; Bell, L. Douglas; Farmer, Damon B.; Gordon, Roy G.; Atwater, Harry A.
Applied Physics Letters
(2004)85:4133-4135

Sealing Porous Low-κ Dielectrics with Silica
de Rouffignac, Philippe; Li, Zhengwen; Gordon, Roy G.
Electrochemical and Solid-State Letters
(2004)7:G306-G308

Improved fill factors in amorphous silicon solar cells on zinc oxide by insertion of a germanium layer to block impurity incorporation
Ganguly, G.; Carlson, D.E.; Hegedus, S.S.;  Ryan, D.; Gordon, R.G.; Pang, D.; Reedy, R.C.
Applied Physics Letters
(2004)85:479-481

Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides
Becker, Jill S.; Kim, Esther; Gordon, Roy G.
Chemistry of Materials
(2004)16:3497-3501

Surface Chemistry and Electrical Properties of Germanium Nanowires
Wang, Dunwei; Chang, Ying-Lan; Wang, Qian; Cao, Jien; Farmer, Damon B.; Gordon, Roy G.; Dai, Hongjie
Journal of the American Chemical Society
(2004)126:11602-11611

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
Javey, Ali; Guo, Jing; Farmer, Damon B.; Wang, Qian; Yenilmez, Erhan; Gordon, Roy G.; Lundstrom, Mark; Dai, Hongjie
Nano Letters
(2004)4:1319-1322

Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores
Chen, Peng; Mitsui, Toshiyuki; Farmer, Damon B.; Golovchenko, Jene; Gordon, Roy G.; Branton, Daniel
Nano Letters
(2004)4:1333-1337

Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications
Lim, Booyong S.; Rahtu, Antti; de Rouffignac, Philippe; Gordon, Roy G.
Applied Physics Letters
(2004)84:3957-3959

Analysis of the crystal structures of 1,3-di-tert-butyl-2,3-dihydro-1H-1,3,2-diazasilol-2-ylidene and 1,3-di-tert-butyl-2,2-dichloro-1,3-diaza-2-sila-4-cyclopentene
Becker, J. S.; Staples, R. J.; Gordon, R. G.
Crystal Research and Technology
(2004)39:85-88

Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics
Javey, Ali; Guo, Jing; Farmer, Damon B.; Wang, Qian; Wang, Dunwei; Gordon, Roy G.; Lundstrom, Mark; Dai, Hongjie
Nano Letters
(2004)4:447-450

Review of Recent Progress in Atomic Layer Deposition (ALD) of Materials for Micro- and Nano-electronics
Gordon, Roy G.
Polymeric Materials: Science and Technology Preprints
(2004)90:726-728

Atomic layer deposition of transition metals
Lim, Booyong S.; Rahtu, Antti; Gordon, Roy G.
Nature Materials
(2003)2:749-754

Synthesis and Characterization of Volatile, Thermally Stable, Reactive Transition Metal Amidinates
Lim, Booyong S.; Rahtu, Antti; Park, Jin-Seong; Gordon, Roy G.
Inorganic Chemistry
(2003)42:7951-7958

Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications
Biercuk, M. J.: Monsma, D. J.; Marcus, C.M.; Becker, J.S.; Gordon, R.G.
Applied Physics Letters
(2003)83:2405-2407

Tungsten Nitride Inverse Opals by Atomic Layer Deposition
Rugge, Alessandro; Becker, Jill S.; Gordon, Roy G.; Tolbert, Sarah H.
Nano Letters
(2003)3:1293-1297

Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors
Hausmann, Dennis M.; de Rouffignac, Philippe; Smith, Amethyst; Gordon, Roy G.; Monsma, Douwe
Thin Solid Films
(2003)443:1-4

Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor
Becker, Jill S.; Suh, Seigi; Gordon, Roy G.
Chemistry of Materials
(2003)15:2969-2976

Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido) tungsten and ammonia
Becker, Jill S.; Gordon, Roy G.
Applied Physics Letters
(2003)82:2239-2241

A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches
Gordon, Roy G.; Hausmann, Dennis M.: Kim, Esther; Shepard, Joseph
Chemical Vapor Deposition
(2003)9:73-78

Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films
Hausmann, Dennis; Gordon, Roy G
Journal of Crystal Growth
(2003)249:251-261

Technological Challenges for Transparent Conductors
Gordon, Roy G.
Advances in Science and Technology (10th International Ceramics Congress, 2002, Part D)
(2003)33:1037-1050

Characteristics of tungsten carbide films prepared by plasma-assisted ALD using bis(tert-butylimido)bis(dimethylamido)tungsten
Kim, Do-Heyoung; Kim, Young Jae; Song, Yo Soon; Lee, Byung-Teak; Kim, Jin Hyeok; Suh, Seigi; Gordon, Roy G.
Journal of The Electrochemical Society
(2003)150:C740-C744

Rapid Vapor Deposition of Highly Conformal Silica Nanolaminates
Hausmann, Dennis; Becker, Jill; Wang, Shenglong; Gordon, Roy G.
Science
(2002)298:402-406

Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors
Hausmann, Dennis M.; Kim, Esther; Becker, Jill; Gordon, Roy G.
Chemistry of Materials
(2002)14:4350-4358

Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics
Gordon, Roy G.; Becker, Jill; Hausmann, Dennis; Suh, Seigi
Chemistry of Materials
(2001)13:2463 - 2464

Atmospheric pressure chemical vapor deposition of electrochromic tungsten oxide films
Gordon, Roy G.; Barry, Sean ; Barton, Jeffrey T.; Broomhall-Dillard, Randy N.R.
Thin Solid Films
(2001)392:231-235

Automatic control of stoichiometry in CVD of metal silicates by alternating surface reactions
Gordon, Roy G.
Electrochemical Society Proceedings
(2001)2001-13:136-143

Alternating layer chemical vapor deposition (ALD) of metal silicates and oxides for gate insulators
Gordon, Roy G.; Becker, Jill; Hausmann, Dennis; Suh, Seigi
Materials Research Society Symposium Proceedings
(2001)670:K2.4.1-K2.4.6

Volatile liquid precursors for the chemical vapor deposition (CVD) of thin films containing tungsten
Gordon, Roy G.; Barry, Sean; Broomhall-Dillard, Randy N.R.; Wagner, Valerie A.; Wang, Ying
Materials Research Society Symposium Proceedings
(2000)612:D9.12.1-D9.12.6

Criteria for Choosing Transparent Conductors
Gordon, Roy G.
MRS Bulletin
(2000)25:52-57

Synthesis and Solution Decomposition Kinetics of Flash-vaporizable Liquid Barium Beta-diketonates
Gordon, Roy G.; Barry, Sean; Broomhall-Dillard, Randy N.R.; Teff, Daniel J.
Advanced Materials for Optics and Electronics
(2000)10:201-211

New Liquid Precursors for CVD of Metal-containing Materials
Gordon, Roy G.
Electrochemical Society Proceedings
(2000)2000-13:248-259

Volatile liquid precursors for the chemical vapor deposition (CVD) of thin films containing alkali metals
Gordon, Roy G.
Materials Research Society Symposium Proceedings
(2000)606:139-145

Monomeric chelated amides of aluminum and gallium: volatile, miscible liquid precursors for CVD
Barry, Sean T.; Gordon, Roy G.; Wagner, Valerie A.
Materials Research Society Symposium Proceedings
(2000)606:83-89

Improved conformality of CVD titanium nitride films
Liu, Xinye; Lu, Yuan Z.; Gordon, Roy G.
Materials Research Society Symposium Proceedings
(1999)555:135-140

Highly conformal diffusion barriers of amorphous niobium nitride
Gordon, R.G.; Liu, X.; Broomhall-Dillard, R.N.R.; Shi, Y.
Materials Research Society Symposium Proceedings
(1999)564:335-340

Liquid compounds for CVD of alkaline earth metals
Gordon, Roy G.; Barry, Sean T.; Liu, Xinye; Teff, Daniel J.
Materials Research Society Symposium Proceedings
(1999)574:23-30

Synthesis and decomposition kinetics of liquid precursors for chemical vapor deposition (CVD) of barium
Gordon, Roy G.; Barry, Sean T.; Broomhall-Dillard, Randy N.R.; DiCeglie, Nicholas Jr.; Liu, Xinye; Teff, Daniel J.
Electrochemical Society Proceedings
(1999)98-23:270-279

New liquid precursors for chemical vapor deposition
Gordon, Roy G.; Chen, Feng; Diceglie, Nicholas J. Jr.; Kenigsberg, Amos; Liu, Xinye; Teff, Daniel J.; Thornton, John
Materials Research Society Symposium Proceedings
(1998)495:63-68

Calculation of Mineral Properties with the Electron Gas Model
Gordon, Roy G.; Lacks, Daniel J.
Molecular Engineering
(1997)6:63-79

Chemical vapor deposition and properties of amorphous aluminum oxide films
Gordon, Roy G.; Kramer, Keith; Liu, Xinye
Materials Research Society Symposium Proceedings
(1997)446:383-388

Deposition of Transparent Conducting Oxides for Solar Cells
Gordon, Roy G.
American Institute of Physics Conference Proceedings
(1997)394:39-48

Chemical vapor deposition of coatings on glass
Gordon, Roy G.
Journal of Non-Crystalline Solids
(1997)218:81-91

Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamino) titanium and ammonia
Musher, Joshua N.; Gordon, Roy G.
Journal of Materials Research
(1996)11:989-1001

Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride of Tetrakis (diethylamido) Titanium and Ammonia
Musher, Joshua N.; Gordon, Roy G.
Journal of The Electrochemical Society
(1996)143:736-744

Calculation of Mineral Properties with the Electron Gas Model
Gordon, Roy G.; Lacks, Daniel J.
Molecular Engineering
(1996)6:63-79

Atmospheric pressure chemical vapor deposition of titanium nitride from titanium bromide ammonia
Gordon, Roy G.; Frisbie, Ross W.; Musher, Joshua; Thornton, John
Materials Research Society Symposium Proceedings
(1996)410:283-288

Preparation and properties of transparent conductors
Gordon, Roy G.
Materials Research Society Symposium Proceedings
(1996)426:419-429

Depositions and Reactions of Metals and Metal Compounds
Gordon, Roy G.
Electronic Materials Chemistry
(1996)171-197

Optimization of textured-dielectric coatings for crystalline-silicon solar cells
Gee, James M.; Gordon, Roy G.
Institute of Electrical and Electronics Engineers Photovoltaic Special Conference
(1996)25:733-736

Low-temperature atmospheric-pressure metal-organic chemical vapor deposition of molybdenum nitride thin films
Fix, Renaud; Gordon, Roy G.; Hoffman, David M.
Thin Solid Films
(1996)288:116-119

Step Coverage and Material Properties of CVD Titanium Nitride Films from TDMAT and TDEAT Organic Precursors
Toprac, Anthony J.; Wang, Shi-Qing; Musher, Joshua; Gordon, Roy G.
Materials Research Society Symposium Proceedings
(1995)355:323-328

Calculations of Pressure-Induced Phase Transitions in Mantle Minerals
Lacks, Daniel J.; Gordon, Roy G.
Physics and Chemistry of Minerals
(1995)22:145-150

Use of generalized gradient approximation in pseudopotential calculations of solids
Juan, Yu-Min; Kaxiras, Efthimios; Gordon, Roy G.
American Physical Society Physical Review B: Condensed Matter
(1995)51:9521-9525

CVD precursors containing hydropyridine ligands
Gordon, Roy G.; Thornton, John; Chen, Feng
Materials Research Society Symposium Proceedings
(1995)363:183-194